IPN80R1K2P7ATMA1 vs IPL60R105P7AUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPN80R1K2P7ATMA1 disebabkan oleh Infineon dan IPL60R105P7AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPN80R1K2P7ATMA1 IPL60R105P7AUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Family / Series CoolMOS P7 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage VDSS 800 V —
Continuous Drain Current ID (Tc) 4.5 A —
Maximum RDS(on) 1200 mΩ at VGS = 10 V —
Power Dissipation PD (Tc) 6.8 W —
Gate-Source Voltage VGSS [DATA_NEEDED: VGSS absolute maximum] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/min/max] —
Technology Superjunction (CoolMOS) Superjunction (SJ) N-Channel Power MOSFET
Kemasan SOT-223 (3-pin, 2 + tab) PG-VSON-4 (4-pin SMD with exposed pad)
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55°C to +150°C (TJ) -55C to +150C
ESD Protection ESD-protected gate (per CoolMOS P7 family) —
RoHS Compliance Compliant —
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
Series — CoolMOS P7
Drain-Source Voltage (VDS) — 600 V
On-Resistance (RDS(on)) max — 105 mΩ
Continuous Drain Current (ID) at Tc — 33 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (Ptot) at Tc — 137 W
Gate Threshold Voltage (VGS(th)) typ — 3.5 V
Gate Charge (Qg) typ — 45 nC
Channel Type — N-Channel
Status RoHS — Compliant
Boson Bebas — Yes
Lead-Free — Yes

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