IPN80R1K2P7ATMA1 vs IPL60R105P7AUMA1 Comparison
Detailed side-by-side comparison of IPN80R1K2P7ATMA1 by Infineon and IPL60R105P7AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPL60R105P7AUMA1 - 600V CoolMOS P7 105mΩ N-Channel MOSFET | Infineon
IPL60R105P7AUMA1 ✓ ActiveSpecification Comparison
| Parameter | IPN80R1K2P7ATMA1 | IPL60R105P7AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Family / Series | CoolMOS P7 | — |
| Transistor Type | N-Channel MOSFET | — |
| Drain-Source Voltage VDSS | 800 V | — |
| Continuous Drain Current ID (Tc) | 4.5 A | — |
| Maximum RDS(on) | 1200 mΩ at VGS = 10 V | — |
| Power Dissipation PD (Tc) | 6.8 W | — |
| Gate-Source Voltage VGSS | [DATA_NEEDED: VGSS absolute maximum] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Technology | Superjunction (CoolMOS) | Superjunction (SJ) N-Channel Power MOSFET |
| Package | SOT-223 (3-pin, 2 + tab) | PG-VSON-4 (4-pin SMD with exposed pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | -55°C to +150°C (TJ) | -55C to +150C |
| ESD Protection | ESD-protected gate (per CoolMOS P7 family) | — |
| RoHS Compliance | Compliant | — |
| MSL Level | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Series | — | CoolMOS P7 |
| Drain-Source Voltage (VDS) | — | 600 V |
| On-Resistance (RDS(on)) max | — | 105 mΩ |
| Continuous Drain Current (ID) at Tc | — | 33 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Ptot) at Tc | — | 137 W |
| Gate Threshold Voltage (VGS(th)) typ | — | 3.5 V |
| Gate Charge (Qg) typ | — | 45 nC |
| Channel Type | — | N-Channel |
| RoHS Status | — | Compliant |
| Halogen Free | — | Yes |
| Lead-Free | — | Yes |