IPP075N15N3GXKSA1 vs IPP320N20N3GXKSA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPP075N15N3GXKSA1 disebabkan oleh Infineon dan IPP320N20N3GXKSA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPP075N15N3GXKSA1 IPP320N20N3GXKSA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 3 OptiMOS 3
Technology N-Channel MOSFET (OptiMOS 3) N-Channel Trench MOSFET
Drain-Source Voltage (VDS) 150 V 200 V
Continuous Drain Current (ID, Tc=25C) 100 A —
Power Dissipation (PD, Tc=25C) 300 W —
On-State Resistance (RDS(on) max, VGS=10V) 7.5 mOhm —
Gate-Source Voltage (VGS) [DATA_NEEDED: gate-source voltage absolute max] —
Kemasan PG-TO220-3 (TO-220 through-hole) TO-220-3 (PG-TO220-3) through-hole
Jenis Pemasangan Through Hole Through Hole
Gambaran Suhu Operasi [DATA_NEEDED: junction operating temperature range] -55°C to +175°C
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typical] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Lead-Free / RoHS RoHS Compliant —
Ordering Code Suffix GXKSA1 (Tube pack, RoHS compliant) —
Continuous Drain Current (ID) at TC=25°C — 34 A
On-State Resistance RDS(on) max at VGS=10V — 32 mΩ
Gate Threshold Voltage VGS(th) typ — 4 V
Total Power Dissipation PD at TC=25°C — 136 W
Bilangan Pin — 3 (3 + Tab)
Channel Type — N-Channel
Element Configuration — Single
Status RoHS — Compliant
Lead-Free — Yes
Aras MSL — Not applicable (through-hole)

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