IPTC017N12NM6ATMA1 vs IGD08N120S7ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPTC017N12NM6ATMA1 disebabkan oleh Infineon dan IGD08N120S7ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IGD08N120S7ATMA1 IGD08N120S7ATMA1 - 1200V Trench Stop IGBT, 24A | Infineon

IGD08N120S7ATMA1 - 1200V Trench Stop IGBT, 24A | Infineon

IGD08N120S7ATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPTC017N12NM6ATMA1 IGD08N120S7ATMA1
Merek Infineon Infineon
Kategori MOSFETs IGBTs
Status Lingkungan Hidup Aktif Aktif
Technology OptiMOS 6, N-channel trench MOSFET Trench Field Stop, 7th generation
Drain-Source Voltage (VDS) 120 V —
Continuous Drain Current (ID, Ta) 32 A —
Continuous Drain Current (ID, Tc) 331 A —
On-State Resistance RDS(on) max 1.7 mΩ at VGS = 10 V —
Gate-Source Threshold VGS(th) 2.4 V (typ) —
Total Gate Charge QG 141 nC at VGS = 10 V —
Input Capacitance Ciss 2.4 nF at VDS = 60 V —
Output Capacitance Coss 11000 pF at VDS = 60 V —
Power Dissipation (Ta) 3.8 W —
Power Dissipation (Tc) 395 W —
Kemasan PG-HDSOP-16 (Surface Mount) PG-TO252-3 (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55 °C to +175 °C (TJ max) —
Gate Drive Voltage (recommended) 10 V —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Product Family — IGBT 7 (S7) Trench Field Stop
Collector-Emitter Voltage (Vce max) — 1200 V
Continuous Collector Current (Ic, Tc=25C) — 24 A
Pulsed Collector Current (Icm) — [DATA_NEEDED: pulsed collector current]
Total Power Dissipation (Ptot) — 106 W
Gate-Emitter Voltage (Vge max) — [DATA_NEEDED: Vge max]
VCE(sat) at rated Ic — 1.65 V
Co-packaged Diode — Yes (anti-parallel emitter diode)
Suhu Hubungan Operasi — -40C to +175C (industry grade)
Configuration — Single

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