IPTC017N12NM6ATMA1 vs IGD08N120S7ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPTC017N12NM6ATMA1 sa pamamagitan ng Infineon at IGD08N120S7ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPTC017N12NM6ATMA1 - 120V 1.7mΩ 331A OptiMOS 6 MOSFET | Infineon
IPTC017N12NM6ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPTC017N12NM6ATMA1 | IGD08N120S7ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | IGBTs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Technology | OptiMOS 6, N-channel trench MOSFET | Trench Field Stop, 7th generation |
| Drain-Source Voltage (VDS) | 120 V | — |
| Continuous Drain Current (ID, Ta) | 32 A | — |
| Continuous Drain Current (ID, Tc) | 331 A | — |
| On-State Resistance RDS(on) max | 1.7 mΩ at VGS = 10 V | — |
| Gate-Source Threshold VGS(th) | 2.4 V (typ) | — |
| Total Gate Charge QG | 141 nC at VGS = 10 V | — |
| Input Capacitance Ciss | 2.4 nF at VDS = 60 V | — |
| Output Capacitance Coss | 11000 pF at VDS = 60 V | — |
| Power Dissipation (Ta) | 3.8 W | — |
| Power Dissipation (Tc) | 395 W | — |
| Packhaging | PG-HDSOP-16 (Surface Mount) | PG-TO252-3 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -55 °C to +175 °C (TJ max) | — |
| Gate Drive Voltage (recommended) | 10 V | — |
| Tindminan RoHS | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | IGBT 7 (S7) Trench Field Stop |
| Collector-Emitter Voltage (Vce max) | — | 1200 V |
| Continuous Collector Current (Ic, Tc=25C) | — | 24 A |
| Pulsed Collector Current (Icm) | — | [DATA_NEEDED: pulsed collector current] |
| Total Power Dissipation (Ptot) | — | 106 W |
| Gate-Emitter Voltage (Vge max) | — | [DATA_NEEDED: Vge max] |
| VCE(sat) at rated Ic | — | 1.65 V |
| Co-packaged Diode | — | Yes (anti-parallel emitter diode) |
| Temperature ng Junction na Operasyon | — | -40C to +175C (industry grade) |
| Configuration | — | Single |