IPTC017N12NM6ATMA1 vs IGD08N120S7ATMA1 比較
詳細並排比較 IPTC017N12NM6ATMA1 由 Infineon 與 IGD08N120S7ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IPTC017N12NM6ATMA1 | IGD08N120S7ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | IGBTs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Technology | OptiMOS 6, N-channel trench MOSFET | Trench Field Stop, 7th generation |
| Drain-Source Voltage (VDS) | 120 V | — |
| Continuous Drain Current (ID, Ta) | 32 A | — |
| Continuous Drain Current (ID, Tc) | 331 A | — |
| On-State Resistance RDS(on) max | 1.7 mΩ at VGS = 10 V | — |
| Gate-Source Threshold VGS(th) | 2.4 V (typ) | — |
| Total Gate Charge QG | 141 nC at VGS = 10 V | — |
| Input Capacitance Ciss | 2.4 nF at VDS = 60 V | — |
| Output Capacitance Coss | 11000 pF at VDS = 60 V | — |
| Power Dissipation (Ta) | 3.8 W | — |
| Power Dissipation (Tc) | 395 W | — |
| 封裝 | PG-HDSOP-16 (Surface Mount) | PG-TO252-3 (DPAK) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | -55 °C to +175 °C (TJ max) | — |
| Gate Drive Voltage (recommended) | 10 V | — |
| RoHS 狀態 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | IGBT 7 (S7) Trench Field Stop |
| Collector-Emitter Voltage (Vce max) | — | 1200 V |
| Continuous Collector Current (Ic, Tc=25C) | — | 24 A |
| Pulsed Collector Current (Icm) | — | [DATA_NEEDED: pulsed collector current] |
| Total Power Dissipation (Ptot) | — | 106 W |
| Gate-Emitter Voltage (Vge max) | — | [DATA_NEEDED: Vge max] |
| VCE(sat) at rated Ic | — | 1.65 V |
| Co-packaged Diode | — | Yes (anti-parallel emitter diode) |
| 工作接面溫度 | — | -40C to +175C (industry grade) |
| Configuration | — | Single |