IPTC039N15NM5ATMA1 vs IPD65R380E6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPTC039N15NM5ATMA1 disebabkan oleh Infineon dan IPD65R380E6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IPTC039N15NM5ATMA1 - 150V 190A OptiMOS 5 N-Channel MOSFET | Infineon
IPTC039N15NM5ATMA1 ✓ Aktif
Pengandingan Spesifikasi
| Parametr | IPTC039N15NM5ATMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | CoolMOS™ E6 |
| Jenis Transistor | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at Ta | 21 A | — |
| Continuous Drain Current (ID) at Tc | 190 A | — |
| Power Dissipation (PD) at Ta | 3.8 W | — |
| Power Dissipation (PD) at Tc | 319 W | — |
| On-Resistance RDS(on) typical | 3.9 mOhm | — |
| Gate Charge Qg typical | 74 nC | — |
| Maximum Gate-Source Voltage (VGS) | 20 V | — |
| Suhu Operasi | -55 C to +175 C (junction) | — |
| Kemasan | PG-HDSOP-16-2 (top-side cooled) | PG-TO252-3 (DPAK), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench | Superjunction (CoolMOS™) |
| Cooling | Top-side cooled (case above PCB) | — |
| Status RoHS | Compliant | Compliant |
| Drain-Source Voltage (V_DS) | — | 650 V |
| Continuous Drain Current (I_D) at T_C | — | 10.6 A |
| R_DS(on) max at V_GS=10V | — | 380 mΩ |
| R_DS(on) test conditions | — | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Threshold Voltage (V_GS(th)) | — | 3.5 V typ |
| Gate Charge (Q_G) | — | 39 nC at 10 V |
| Input Capacitance (C_iss) | — | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | — | 83 W |
| Gambaran Suhu Operasi | — | -55 °C to +150 °C |
| Aras MSL | — | 1 |