IPTC039N15NM5ATMA1 vs IPD65R380E6ATMA1 Comparison
Detailed side-by-side comparison of IPTC039N15NM5ATMA1 by Infineon and IPD65R380E6ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPTC039N15NM5ATMA1 - 150V 190A OptiMOS 5 N-Channel MOSFET | Infineon
IPTC039N15NM5ATMA1 β ActiveInfineon
IPD65R380E6ATMA1 - 650V CoolMOS E6 MOSFET 380mΞ© 10.6A | Infineon
IPD65R380E6ATMA1 β ActiveSpecification Comparison
| Parameter | IPTC039N15NM5ATMA1 | IPD65R380E6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.05 | $0.65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | CoolMOSβ’ E6 |
| Transistor Type | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 150 V | β |
| Continuous Drain Current (ID) at Ta | 21 A | β |
| Continuous Drain Current (ID) at Tc | 190 A | β |
| Power Dissipation (PD) at Ta | 3.8 W | β |
| Power Dissipation (PD) at Tc | 319 W | β |
| On-Resistance RDS(on) typical | 3.9 mOhm | β |
| Gate Charge Qg typical | 74 nC | β |
| Maximum Gate-Source Voltage (VGS) | 20 V | β |
| Operating Temperature | -55 C to +175 C (junction) | β |
| Package | PG-HDSOP-16-2 (top-side cooled) | PG-TO252-3 (DPAK), surface mount |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench | Superjunction (CoolMOSβ’) |
| Cooling | Top-side cooled (case above PCB) | β |
| RoHS Status | Compliant | Compliant |
| Drain-Source Voltage (V_DS) | β | 650 V |
| Continuous Drain Current (I_D) at T_C | β | 10.6 A |
| R_DS(on) max at V_GS=10V | β | 380 mΞ© |
| R_DS(on) test conditions | β | 3.2 A, 10 V |
| Gate-Source Voltage (V_GS) max | β | Β±20 V |
| Gate Threshold Voltage (V_GS(th)) | β | 3.5 V typ |
| Gate Charge (Q_G) | β | 39 nC at 10 V |
| Input Capacitance (C_iss) | β | 710 pF at 100 V |
| Power Dissipation (P_D) at T_C | β | 83 W |
| Operating Temperature Range | β | -55 Β°C to +150 Β°C |
| MSL Level | β | 1 |