IPTC039N15NM5ATMA1 vs IRF1310NSTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPTC039N15NM5ATMA1 disebabkan oleh Infineon dan IRF1310NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPTC039N15NM5ATMA1 IRF1310NSTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 5 —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (VDS) 150 V 100 V
Continuous Drain Current (ID) at Ta 21 A —
Continuous Drain Current (ID) at Tc 190 A —
Power Dissipation (PD) at Ta 3.8 W —
Power Dissipation (PD) at Tc 319 W —
On-Resistance RDS(on) typical 3.9 mOhm —
Gate Charge Qg typical 74 nC —
Maximum Gate-Source Voltage (VGS) 20 V —
Suhu Operasi -55 C to +175 C (junction) —
Kemasan PG-HDSOP-16-2 (top-side cooled) D2PAK (TO-263AB)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 trench IR MOSFET (HEXFET)
Cooling Top-side cooled (case above PCB) —
Status RoHS Compliant —
Continuous Drain Current (ID) at TC=25C — 42 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 36 mOhm
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — 73.3 nC
Power Dissipation (PD) at TC=25C — 160 W
Power Dissipation (PD) at TA=25C — 3.8 W
Gambaran Suhu Operasi — -55C to +175C
Built-in Diode — Yes (intrinsic body diode)
Lead-Free / RoHS — Yes (PBF suffix)
Configuration — Single with built-in diode

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