IPW60R037P7XKSA1 vs IPL65R200CFD7AUMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IPW60R037P7XKSA1 disebabkan oleh Infineon dan IPL65R200CFD7AUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IPW60R037P7XKSA1 | IPL65R200CFD7AUMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | CoolMOS™ P7 | CoolMOS CFD7 |
| Jenis Transistor | N-Channel MOSFET (Superjunction) | — |
| Drain-Source Voltage (V_DSS) | 600 V | — |
| Continuous Drain Current (I_D, Tc=25 °C) | 76 A | — |
| On-Resistance (R_DS(on), max, V_GS=10 V) | 37 mΩ | — |
| Power Dissipation (P_D, Tc=25 °C) | 255 W | — |
| Gate Threshold Voltage (V_GS(th), typ) | 3.5 V | — |
| Kemasan | PG-TO247-3 (TO-247-3, through-hole) | PG-VSON-4 |
| Jenis Pemasangan | Through Hole | Surface Mount |
| Suhu Hubungan Operasi | -55 °C to +150 °C | — |
| Technology | CoolMOS Superjunction (SJ) | CoolMOS Superjunction (SJ) |
| Orderable Part Number Suffix | XKSA1 (tube packaging, industrial) | — |
| Status RoHS | Compliant | Compliant |
| Avalanche Rated | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 650 V |
| Continuous Drain Current (ID, Tc) | — | 14 A |
| Power Dissipation (PD, Tc) | — | 81 W |
| On-Resistance (RDS(on)) | — | 0.2 ohm at VGS=10V, ID=5.2A |
| Gate Threshold Voltage (VGS(th)) | — | 3.5 V |
| Suhu Operasi | — | -55C to +150C (TJ) |
| Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg value] |
| Body Diode | — | Fast-recovery intrinsic |
| Gate-Source ESD Protection | — | Yes (integrated) |