IQE018N06NM6CGATMA1 vs IPT030N12N3GATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE018N06NM6CGATMA1 disebabkan oleh Infineon dan IPT030N12N3GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IQE018N06NM6CGATMA1 | IPT030N12N3GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 60V | — |
| Channel Type | N-Channel | N-Channel |
| Drain-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D, Tc) | 178 A | — |
| Continuous Drain Current (I_D, Ta) | 25 A | — |
| R_DS(on) max (V_GS=10 V) | 1.8 mΩ | — |
| Gate Threshold Voltage (V_GS(th)) | 3.3 V (logic-level compatible) | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 125 W | — |
| Kemasan | PG-TTFN-9-3 (TOLL/TTFN) | PG-HSOF-8-1 (TOLL) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C (junction) | — |
| Technology | Trench MOSFET, OptiMOS 6 | OptiMOS 3 |
| RoHS Compliance | Compliant | — |
| Configuration | — | Single |
| Maximum Drain-Source Voltage (VDS) | — | 120 V |
| Maximum Gate-Source Voltage (VGS) | — | 20 V |
| Maximum Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) min/typ/max] |
| Maximum On-Resistance (RDS(on)) | — | 3 mΩ |
| Continuous Drain Current (ID) at Ta | — | 24 A (Ta) |
| Pulsed Drain Current (IDM) at Tc | — | 237 A (Tc) |
| Power Dissipation (PD) at Ta | — | 3.8 W (Ta) |
| Power Dissipation (PD) at Tc | — | 375 W (Tc) |
| Suhu Hubungan Operasi | — | -55 °C to +175 °C |
| Automotive Qualified | — | Yes (per manufacturer datasheet) |
| Status RoHS | — | Compliant with Exemption |
| Channel Mode | — | Enhancement |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |