IQE022N06LM5CGSCATMA1 vs IQE050N08NM5CGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE022N06LM5CGSCATMA1 disebabkan oleh Infineon dan IQE050N08NM5CGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΩ Source-Down | Infineon
IQE050N08NM5CGATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQE022N06LM5CGSCATMA1 | IQE050N08NM5CGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (TC) | 151 A | — |
| Continuous Drain Current (TA) | 24 A | — |
| Maximum Power Dissipation (TC) | 100 W | — |
| Maximum Power Dissipation (TA) | 2.5 W | — |
| RDS(on) Maximum at VGS=10V | 2.2 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2.3 V (typ) | — |
| Kemasan | PG-WHTFN-9 (5x6 mm) | PG-TTFN-9-1 (Surface Mount) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +150C | — |
| Technology Family | OptiMOS 5 | — |
| Kiraan Pin | 9 (PG-WHTFN-9) | — |
| Aras MSL | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: MSL rating] |
| Status RoHS | Compliant | Compliant |
| Continuous Drain Current (Ta) | — | 16 A |
| Continuous Drain Current (Tc) | — | 101 A |
| On-Resistance RDS(on) Max | — | 5.0 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 100 W |
| Technology | — | OptiMOS 5 (Source-Down) |
| Gate Threshold Vgs(th) Typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| Suhu Operasi | — | -55°C to +175°C (TJ max) |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge Qg typical] |