IQE022N06LM5CGSCATMA1 vs IQE050N08NM5CGATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQE022N06LM5CGSCATMA1 sa pamamagitan ng Infineon at IQE050N08NM5CGATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQE022N06LM5CGSCATMA1 - 60V 151A OptiMOS 5 N-FET | Infineon
IQE022N06LM5CGSCATMA1 ✓ NakahandaInfineon
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΩ Source-Down | Infineon
IQE050N08NM5CGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQE022N06LM5CGSCATMA1 | IQE050N08NM5CGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (TC) | 151 A | — |
| Continuous Drain Current (TA) | 24 A | — |
| Maximum Power Dissipation (TC) | 100 W | — |
| Maximum Power Dissipation (TA) | 2.5 W | — |
| RDS(on) Maximum at VGS=10V | 2.2 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2.3 V (typ) | — |
| Packhaging | PG-WHTFN-9 (5x6 mm) | PG-TTFN-9-1 (Surface Mount) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +150C | — |
| Technology Family | OptiMOS 5 | — |
| Bilang ng Pin | 9 (PG-WHTFN-9) | — |
| Level ng MSL | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: MSL rating] |
| Tindminan RoHS | Compliant | Compliant |
| Continuous Drain Current (Ta) | — | 16 A |
| Continuous Drain Current (Tc) | — | 101 A |
| On-Resistance RDS(on) Max | — | 5.0 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 100 W |
| Technology | — | OptiMOS 5 (Source-Down) |
| Gate Threshold Vgs(th) Typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| Temperature na Operasyon | — | -55°C to +175°C (TJ max) |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge Qg typical] |