IQE022N06LM5CGSCATMA1 vs IQE050N08NM5CGATMA1 比較
詳細並排比較 IQE022N06LM5CGSCATMA1 由 Infineon 與 IQE050N08NM5CGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IQE022N06LM5CGSCATMA1 | IQE050N08NM5CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | N-Channel |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (TC) | 151 A | — |
| Continuous Drain Current (TA) | 24 A | — |
| Maximum Power Dissipation (TC) | 100 W | — |
| Maximum Power Dissipation (TA) | 2.5 W | — |
| RDS(on) Maximum at VGS=10V | 2.2 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | 2.3 V (typ) | — |
| 封裝 | PG-WHTFN-9 (5x6 mm) | PG-TTFN-9-1 (Surface Mount) |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | -55C to +150C | — |
| Technology Family | OptiMOS 5 | — |
| 腳位數 | 9 (PG-WHTFN-9) | — |
| MSL 等級 | [DATA_NEEDED: MSL Level] | [DATA_NEEDED: MSL rating] |
| RoHS 狀態 | Compliant | Compliant |
| Continuous Drain Current (Ta) | — | 16 A |
| Continuous Drain Current (Tc) | — | 101 A |
| On-Resistance RDS(on) Max | — | 5.0 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 100 W |
| Technology | — | OptiMOS 5 (Source-Down) |
| Gate Threshold Vgs(th) Typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| 工作溫度 | — | -55°C to +175°C (TJ max) |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge Qg typical] |