IQE050N08NM5CGATMA1 vs IQE036N08NM6CGSCATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE050N08NM5CGATMA1 disebabkan oleh Infineon dan IQE036N08NM6CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQE036N08NM6CGSCATMA1 IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGSCATMA1 - 80V 118A OptiMOS 6 N-MOSFET | Infineon

IQE036N08NM6CGSCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQE050N08NM5CGATMA1 IQE036N08NM6CGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 80 V 80 V
Continuous Drain Current (Ta) 16 A —
Continuous Drain Current (Tc) 101 A —
On-Resistance RDS(on) Max 5.0 mΩ —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 100 W —
Kemasan PG-TTFN-9-1 (Surface Mount) —
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 (Source-Down) Trench MOSFET (OptiMOS 6)
Gate Threshold Vgs(th) Typ [DATA_NEEDED: Vgs(th) typical value] —
Suhu Operasi -55°C to +175°C (TJ max) —
Total Gate Charge Qg Typ [DATA_NEEDED: total gate charge Qg typical] —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] —
Manufacturer — Infineon Technologies
Series — OptiMOS 6
Part Status — Active
Continuous Drain Current (ID) at TA — 16.7 A
Continuous Drain Current (ID) at TC — 118 A
Power Dissipation (PD) at TA — 2.5 W
Power Dissipation (PD) at TC — 125 W
Kemasan / Case — PG-WHTFN-9-1 (PQFN 3.3 x 3.3 mm)
Configuration — Source Down, Center Gate, Dual-Side Cooling
Gambaran Suhu Operasi — -55 C to +150 C (junction, per datasheet derating curves)
Packing — Tape and Reel (suffix ATMA1)
Voltage Rating — 60 V to 100 V category (80 V nominal)

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