IQEH46NE2LM7UCGSCATMA1 vs IQDH35N03LM5SCATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQEH46NE2LM7UCGSCATMA1 disebabkan oleh Infineon dan IQDH35N03LM5SCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQEH46NE2LM7UCGSCATMA1 IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon

IQEH46NE2LM7UCGSCATMA1 - 25V 440A OptiMOS 7 N-FET | Infineon

IQEH46NE2LM7UCGSCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQEH46NE2LM7UCGSCATMA1 IQDH35N03LM5SCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Technology OptiMOS 7 (trench) OptiMOS 5 (trench, shielded-gate)
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (ID) at TC 440 A —
Continuous Drain Current (ID) at TA 57 A —
Power Dissipation at TA 2.5 W —
Power Dissipation at TC 150 W —
Maximum On-Resistance (RDS(on)) 0.46 mOhm —
Gate Threshold Voltage (VGS(th)) 2 V —
Kemasan PG-WHTFN-9-1 (PQFN 3.3x3.3 Source-Down) PG-WHSON-8-U02 (PQFN 5x6 Source-Down, 8-pin)
Jenis Pemasangan Surface Mount Surface Mount
Polarity / Channel Type Single N-Channel —
Operating Mode Enhancement-mode —
Topology Suitability Hard- and soft-switching —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Drain-Source Voltage (VDS) max — 30 V
Gate-Source Voltage (VGS) max — ±20 V
Continuous Drain Current (ID) at Ta — 66 A
Pulsed Drain Current (IDM) at Tc — 700 A
On-State Resistance (RDS(on)) max — 0.35 mOhm @ VGS=10V
Power Dissipation (PD) at Ta — 2.5 W
Power Dissipation (PD) at Tc — 278 W
Gambaran Suhu Operasi — -55 C to +175 C
Aras MSL — 1 (unlimited)
Marking — IQDH35N03LM5S

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga