IR2011SPBF vs IR2011STRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IR2011SPBF disebabkan oleh Infineon dan IR2011STRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IR2011SPBF IR2011STRPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Product Type Half-Bridge Gate Driver IC —
Configuration High-Side and Low-Side, Inverting High-Side and Low-Side (Independent)
Bilangan Output 2 —
Offset Voltage (High-Side, max) 200 V —
Gate Drive Supply Voltage (VCC, VBS) 10 V to 20 V —
Output Source/Sink Current 1 A / 1 A (typ) —
Propagation Delay (typ) 80 ns —
Rise / Fall Time (typ) [DATA_NEEDED: rise/fall time] —
Input Logic Compatibility CMOS / LSTTL, down to 3.0 V —
dV/dt Immunity Yes —
Negative Transient Tolerance Yes (on VS pin) dV/dt immune
Gambaran Suhu Operasi -40 C to +125 C —
Kemasan 8-SOIC (DSO-8) 8-SOIC (3.90 mm body width)
Jenis Pemasangan Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix) Lead-Free, RoHS Compliant
Tube / Reel Packaging Tube (per Infineon PBF convention) —
Number of Drivers — 2 (Half-Bridge)
Peak Source Current — 1 A (typical)
Peak Sink Current — 1 A (typical)
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Supply Voltage (VBS) — 10 V to 20 V (operational to +200 V)
Logic Input Compatibility — 3.0 V CMOS or LSTTL
Propagation Delay (typ.) — 80 ns
Turn-On Rise Time (typ.) — 35 ns
Turn-Off Fall Time (typ.) — 20 ns
Offset Voltage Rating — 200 V
Suhu Operasi — -40 C to +125 C

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