IR2011SPBF vs IR2011STRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IR2011SPBF sa pamamagitan ng Infineon at IR2011STRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IR2011SPBF IR2011STRPBF
Brand Infineon Infineon
Kategorya Power MOSFET Drivers Power MOSFET Drivers
Katayuan ng Lifecycle Aktibo Aktibo
Product Type Half-Bridge Gate Driver IC —
Configuration High-Side and Low-Side, Inverting High-Side and Low-Side (Independent)
Bilang ng Outputs 2 —
Offset Voltage (High-Side, max) 200 V —
Gate Drive Supply Voltage (VCC, VBS) 10 V to 20 V —
Output Source/Sink Current 1 A / 1 A (typ) —
Propagation Delay (typ) 80 ns —
Rise / Fall Time (typ) [DATA_NEEDED: rise/fall time] —
Input Logic Compatibility CMOS / LSTTL, down to 3.0 V —
dV/dt Immunity Yes —
Negative Transient Tolerance Yes (on VS pin) dV/dt immune
Hanay ng Temperature na Operasyon -40 C to +125 C —
Packhaging 8-SOIC (DSO-8) 8-SOIC (3.90 mm body width)
Uri ng Pagpapasok Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix) Lead-Free, RoHS Compliant
Tube / Reel Packaging Tube (per Infineon PBF convention) —
Number of Drivers — 2 (Half-Bridge)
Peak Source Current — 1 A (typical)
Peak Sink Current — 1 A (typical)
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Supply Voltage (VBS) — 10 V to 20 V (operational to +200 V)
Logic Input Compatibility — 3.0 V CMOS or LSTTL
Propagation Delay (typ.) — 80 ns
Turn-On Rise Time (typ.) — 35 ns
Turn-Off Fall Time (typ.) — 20 ns
Offset Voltage Rating — 200 V
Temperature na Operasyon — -40 C to +125 C

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