IR2011SPBF vs IR2011STRPBF 比較

詳細並排比較 IR2011SPBF 由 Infineon 與 IR2011STRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IR2011SPBF IR2011STRPBF
品牌 Infineon Infineon
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
Product Type Half-Bridge Gate Driver IC —
Configuration High-Side and Low-Side, Inverting High-Side and Low-Side (Independent)
輸出數量 2 —
Offset Voltage (High-Side, max) 200 V —
Gate Drive Supply Voltage (VCC, VBS) 10 V to 20 V —
Output Source/Sink Current 1 A / 1 A (typ) —
Propagation Delay (typ) 80 ns —
Rise / Fall Time (typ) [DATA_NEEDED: rise/fall time] —
Input Logic Compatibility CMOS / LSTTL, down to 3.0 V —
dV/dt Immunity Yes —
Negative Transient Tolerance Yes (on VS pin) dV/dt immune
工作溫度範圍 -40 C to +125 C —
封裝 8-SOIC (DSO-8) 8-SOIC (3.90 mm body width)
安裝類型 Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix) Lead-Free, RoHS Compliant
Tube / Reel Packaging Tube (per Infineon PBF convention) —
Number of Drivers — 2 (Half-Bridge)
Peak Source Current — 1 A (typical)
Peak Sink Current — 1 A (typical)
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Supply Voltage (VBS) — 10 V to 20 V (operational to +200 V)
Logic Input Compatibility — 3.0 V CMOS or LSTTL
Propagation Delay (typ.) — 80 ns
Turn-On Rise Time (typ.) — 35 ns
Turn-Off Fall Time (typ.) — 20 ns
Offset Voltage Rating — 200 V
工作溫度 — -40 C to +125 C

資料表與資源

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