IR2011SPBF vs IR2011STRPBF 对比

详细并排对比 IR2011SPBF 出自 Infineon 和 IR2011STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 IR2011SPBF IR2011STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.18 $0.71
Product Type Half-Bridge Gate Driver IC —
Configuration High-Side and Low-Side, Inverting High-Side and Low-Side (Independent)
输出数量 2 —
Offset Voltage (High-Side, max) 200 V —
Gate Drive Supply Voltage (VCC, VBS) 10 V to 20 V —
Output Source/Sink Current 1 A / 1 A (typ) —
Propagation Delay (typ) 80 ns —
Rise / Fall Time (typ) [DATA_NEEDED: rise/fall time] —
Input Logic Compatibility CMOS / LSTTL, down to 3.0 V —
dV/dt Immunity Yes —
Negative Transient Tolerance Yes (on VS pin) dV/dt immune
工作温度范围 -40 C to +125 C —
封装 8-SOIC (DSO-8) 8-SOIC (3.90 mm body width)
安装类型 Surface Mount Surface Mount
Lead-Free / RoHS Yes (PBF suffix) Lead-Free, RoHS Compliant
Tube / Reel Packaging Tube (per Infineon PBF convention) —
Number of Drivers — 2 (Half-Bridge)
Peak Source Current — 1 A (typical)
Peak Sink Current — 1 A (typical)
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Floating Supply Voltage (VBS) — 10 V to 20 V (operational to +200 V)
Logic Input Compatibility — 3.0 V CMOS or LSTTL
Propagation Delay (typ.) — 80 ns
Turn-On Rise Time (typ.) — 35 ns
Turn-Off Fall Time (typ.) — 20 ns
Offset Voltage Rating — 200 V
工作温度 — -40 C to +125 C

数据手册与资源

浏览全部产品 创建 BOM 获取报价