IRF150P220AKMA1 vs IRFR4615TRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF150P220AKMA1 disebabkan oleh Infineon dan IRFR4615TRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IRFR4615TRLPBF IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF - 150V 33A N-Ch MOSFET, DPAK | Infineon

IRFR4615TRLPBF ✓ Aktif

Pengandingan Spesifikasi

Parametr IRF150P220AKMA1 IRFR4615TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number IRF150P220AKMA1 —
Technology StrongIRFET IR MOSFET (N-Channel Enhancement Mode)
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS max) 150 V —
Continuous Drain Current (ID) at Tc=25C 203 A —
On-Resistance (RDS(on) max) at VGS=10V 2.7 mOhm —
Gate-Source Voltage (VGS max) [DATA_NEEDED: VGS max] —
Gate Threshold Voltage (VGS(th) typ) [DATA_NEEDED: VGS(th) typ] —
Power Dissipation (Pd) at Tc=25C 556 W —
Power Dissipation (Pd) at Ta=25C 3.8 W —
Gambaran Suhu Operasi -55C to +175C -55C to +175C
Kemasan TO-247-3 (PG-TO247-3) TO-252AA (DPAK)
Jenis Pemasangan Through Hole Surface Mount
Terminal Finish Tin (Sn) —
JESD-609 Code e3 —
Status RoHS Compliant —
Lead-Free Yes —
Drain-Source Voltage (VDS) — 150 V
Continuous Drain Current (ID) at TC=25C — 33 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max — [DATA_NEEDED: VGS max]
On-Resistance RDS(on) max at VGS=10V — 42 mOhm
Total Gate Charge (Qg) — 26 nC
Gate-Source Charge (Qgs) — [DATA_NEEDED: Qgs]
Gate-Drain Charge (Qgd) — [DATA_NEEDED: Qgd]
Power Dissipation (PD) at TC=25C — 144 W
Avalanche Energy (EAS) — 109 mJ
Lead-Free / RoHS — Yes (PBF suffix indicates Pb-free)
Tenaga Gesa tunggal padek — 109 mJ

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