IRF5210PBF vs IRF520NPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF5210PBF disebabkan oleh Infineon dan IRF520NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF5210PBF | IRF520NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $0.82 | — |
| Jenis Transistor | P-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | -100 V | — |
| Continuous Drain Current (Id) at Tc | -40 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-Source Threshold Voltage (Vgs(th)) | -2 V to -4 V (typical -2 V) | — |
| On-Resistance Rds(on) at Vgs=-10V | 60 milliohms | — |
| Total Gate Charge (Qg) | 120 nC | — |
| Power Dissipation (Pd) at Tc | 200 W | — |
| Gambaran Suhu Operasi | -55 C to +175 C (junction) | -55C to +175C |
| Kemasan | TO-220AB (through-hole) | TO-220AB (through-hole) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Technology | HEXFET (Fifth Generation) | HEXFET (vertical DMOS) |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| Tab Connection | Electrically tied to Drain | — |
| Pin Configuration | Gate / Drain (tab) / Source (G-D-S, front view) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | HEXFET |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (V_DSS) | — | 100 V |
| Continuous Drain Current (I_D) at Tc | — | 9.7 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-to-Source Voltage (V_GS) max | — | ±20 V |
| R_DS(on) max at V_GS=10V | — | 200 mOhm |
| Total Gate Charge (Q_g) | — | 16.7 nC |
| Power Dissipation (P_D) at Tc | — | 48 W |
| Aras MSL | — | 1 (unlimited) |
| Status RoHS | — | Compliant (Pb-free) |
| Lead-Free Finish | — | Yes (PBF suffix) |