IRF5210PBF vs IRF520NPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRF5210PBF tarafından Infineon ve IRF520NPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRF5210PBF | IRF520NPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Stok Durumu | In Stock | — |
| Birim Fiyat (USD) | $0,82 | — |
| Transistor Türü | P-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | -100 V | — |
| Continuous Drain Current (Id) at Tc | -40 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-Source Threshold Voltage (Vgs(th)) | -2 V to -4 V (typical -2 V) | — |
| On-Resistance Rds(on) at Vgs=-10V | 60 milliohms | — |
| Total Gate Charge (Qg) | 120 nC | — |
| Power Dissipation (Pd) at Tc | 200 W | — |
| İşletim Sıcaklığı Aralığı | -55 C to +175 C (junction) | -55C to +175C |
| Paket | TO-220AB (through-hole) | TO-220AB (through-hole) |
| Montaj Türü | Through Hole | Through Hole |
| Technology | HEXFET (Fifth Generation) | HEXFET (vertical DMOS) |
| Lead-Free / RoHS | Yes (PBF suffix = lead-free) | — |
| Tab Connection | Electrically tied to Drain | — |
| Pin Configuration | Gate / Drain (tab) / Source (G-D-S, front view) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | HEXFET |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (V_DSS) | — | 100 V |
| Continuous Drain Current (I_D) at Tc | — | 9.7 A |
| Pulsed Drain Current (I_DM) | — | [DATA_NEEDED: pulsed drain current value] |
| Gate-to-Source Voltage (V_GS) max | — | ±20 V |
| R_DS(on) max at V_GS=10V | — | 200 mOhm |
| Total Gate Charge (Q_g) | — | 16.7 nC |
| Power Dissipation (P_D) at Tc | — | 48 W |
| MSL Seviyesi | — | 1 (unlimited) |
| RoHS Durumu | — | Compliant (Pb-free) |
| Lead-Free Finish | — | Yes (PBF suffix) |