IRF5210PBF vs IRF520NPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRF5210PBF sa pamamagitan ng Infineon at IRF520NPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRF5210PBF IRF520NPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Katayuan ng Stock In Stock —
Presyo ng Yunit (USD) $0.82 —
Uri ng Transistor P-Channel MOSFET —
Drain-Source Voltage (Vds) -100 V —
Continuous Drain Current (Id) at Tc -40 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current value] —
Gate-Source Threshold Voltage (Vgs(th)) -2 V to -4 V (typical -2 V) —
On-Resistance Rds(on) at Vgs=-10V 60 milliohms —
Total Gate Charge (Qg) 120 nC —
Power Dissipation (Pd) at Tc 200 W —
Hanay ng Temperature na Operasyon -55 C to +175 C (junction) -55C to +175C
Packhaging TO-220AB (through-hole) TO-220AB (through-hole)
Uri ng Pagpapasok Through Hole Through Hole
Technology HEXFET (Fifth Generation) HEXFET (vertical DMOS)
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
Tab Connection Electrically tied to Drain —
Pin Configuration Gate / Drain (tab) / Source (G-D-S, front view) —
Manufacturer — Infineon Technologies
Series — HEXFET
FET Type — N-Channel
Drain-to-Source Voltage (V_DSS) — 100 V
Continuous Drain Current (I_D) at Tc — 9.7 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current value]
Gate-to-Source Voltage (V_GS) max — ±20 V
R_DS(on) max at V_GS=10V — 200 mOhm
Total Gate Charge (Q_g) — 16.7 nC
Power Dissipation (P_D) at Tc — 48 W
Level ng MSL — 1 (unlimited)
Tindminan RoHS — Compliant (Pb-free)
Lead-Free Finish — Yes (PBF suffix)

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita