IRF5305STRLPBF vs IRF5305STRRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF5305STRLPBF disebabkan oleh Infineon dan IRF5305STRRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IRF5305STRLPBF IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF - 55V P-Ch MOSFET 31A 60mΩ | Infineon

IRF5305STRLPBF ✓ Aktif

Pengandingan Spesifikasi

Parametr IRF5305STRLPBF IRF5305STRRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -55 V —
Continuous Drain Current (ID) at TC=25C -31 A —
Continuous Drain Current (ID) at TA=25C [DATA_NEEDED: ID at TA=25C] —
RDS(on) max at VGS=-10V 60 mOhm —
RDS(on) max at VGS=-4.5V [DATA_NEEDED: RDS(on) at VGS=-4.5V] —
Gate Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typ] —
Total Gate Charge (Qg) 42 nC (Mouser listing) / 63 nC (Future Electronics listing) —
Maximum Power Dissition at Tc 110 W —
Maximum Power Dissipation at TA 3.8 W —
Kemasan TO-263 / D2PAK (surface mount) D2PAK (TO-263) Surface Mount
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi [DATA_NEEDED: Tj max / operating range] —
Technology HEXFET (fifth generation), IR MOSFET HEXFET (Advanced Process)
Packaging Tape & Reel (TR), 800 pcs per reel Tape & Reel (TR)
Lead-Free / RoHS Yes (Pb-free suffix PBF) Yes (Pb-free suffix)
Jenis Transistor — P-Channel MOSFET
Drain-to-Source Voltage (VDS) — -55 V
Continuous Drain Current (ID) at TC — -31 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max — ±20 V
RDS(on) max @ VGS=-10V — 60 mOhm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/min]
Power Dissipation (TC) — 110 W
Power Dissipation (TA) — 3.8 W
Suhu Hubungan Operasi — -55C to +175C
Polarity — P-Channel

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