IRF5305STRLPBF vs IRF5305STRRPBF Comparison
Detailed side-by-side comparison of IRF5305STRLPBF by Infineon and IRF5305STRRPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | IRF5305STRLPBF | IRF5305STRRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.92 | $0.62 |
| Polarity / Channel Type | P-Channel | β |
| Drain-Source Voltage (VDS) | -55 V | β |
| Continuous Drain Current (ID) at TC=25C | -31 A | β |
| Continuous Drain Current (ID) at TA=25C | [DATA_NEEDED: ID at TA=25C] | β |
| RDS(on) max at VGS=-10V | 60 mOhm | β |
| RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | β |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typ] | β |
| Total Gate Charge (Qg) | 42 nC (Mouser listing) / 63 nC (Future Electronics listing) | β |
| Maximum Power Dissition at Tc | 110 W | β |
| Maximum Power Dissipation at TA | 3.8 W | β |
| Package | TO-263 / D2PAK (surface mount) | D2PAK (TO-263) Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: Tj max / operating range] | β |
| Technology | HEXFET (fifth generation), IR MOSFET | HEXFET (Advanced Process) |
| Packaging | Tape & Reel (TR), 800 pcs per reel | Tape & Reel (TR) |
| Lead-Free / RoHS | Yes (Pb-free suffix PBF) | Yes (Pb-free suffix) |
| Transistor Type | β | P-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | β | -55 V |
| Continuous Drain Current (ID) at TC | β | -31 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | β | Β±20 V |
| RDS(on) max @ VGS=-10V | β | 60 mOhm |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/min] |
| Power Dissipation (TC) | β | 110 W |
| Power Dissipation (TA) | β | 3.8 W |
| Operating Junction Temperature | β | -55C to +175C |
| Polarity | β | P-Channel |