IRF5305STRLPBF vs IRF5305STRRPBF 比較
詳細並排比較 IRF5305STRLPBF 由 Infineon 與 IRF5305STRRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRF5305STRLPBF | IRF5305STRRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Polarity / Channel Type | P-Channel | — |
| Drain-Source Voltage (VDS) | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | -31 A | — |
| Continuous Drain Current (ID) at TA=25C | [DATA_NEEDED: ID at TA=25C] | — |
| RDS(on) max at VGS=-10V | 60 mOhm | — |
| RDS(on) max at VGS=-4.5V | [DATA_NEEDED: RDS(on) at VGS=-4.5V] | — |
| Gate Threshold Voltage VGS(th) typ | [DATA_NEEDED: VGS(th) typ] | — |
| Total Gate Charge (Qg) | 42 nC (Mouser listing) / 63 nC (Future Electronics listing) | — |
| Maximum Power Dissition at Tc | 110 W | — |
| Maximum Power Dissipation at TA | 3.8 W | — |
| 封裝 | TO-263 / D2PAK (surface mount) | D2PAK (TO-263) Surface Mount |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度範圍 | [DATA_NEEDED: Tj max / operating range] | — |
| Technology | HEXFET (fifth generation), IR MOSFET | HEXFET (Advanced Process) |
| Packaging | Tape & Reel (TR), 800 pcs per reel | Tape & Reel (TR) |
| Lead-Free / RoHS | Yes (Pb-free suffix PBF) | Yes (Pb-free suffix) |
| 電晶體類型 | — | P-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | -55 V |
| Continuous Drain Current (ID) at TC | — | -31 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max @ VGS=-10V | — | 60 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min] |
| Power Dissipation (TC) | — | 110 W |
| Power Dissipation (TA) | — | 3.8 W |
| 工作接面溫度 | — | -55C to +175C |
| Polarity | — | P-Channel |