IRF640NSTRLPBF vs IRF640NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF640NSTRLPBF disebabkan oleh Infineon dan IRF640NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF640NSTRLPBF IRF640NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology HEXFET (5th generation, trench MOSFET) HEXFET (5th Generation)
Drain-to-Source Voltage (VDS) 200 V 200 V
Continuous Drain Current (ID, Tc=25C) 18 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD, Tc=25C) 150 W —
On-Resistance (RDS(on)) at VGS=10V 0.15 ohm —
Gate-to-Source Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] —
Total Gate Charge (Qg) 44.7 nC 44.7 nC
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Transfer Capacitance (Crss) [DATA_NEEDED: Crss] —
Gambaran Suhu Hubungan Operasi -55C to +175C —
Kemasan D2PAK (TO-263AB), surface mount, 3-pin (2+tab) TO-220AB (through-hole, 3-pin)
Jenis Pemasangan Surface Mount (Tape and Reel) Through Hole
Lead-Free (PbF) Yes —
Status RoHS Compliant Compliant
Continuous Drain Current (ID) at Tc — 18 A
Gate-to-Source Voltage (VGS) max — ±20 V
Static Drain-to-Source On-Resistance (RDS(on)) — 150 mOhm max at VGS = 10 V
Power Dissipation (PD) at Tc=25C — 150 W
Suhu Hubungan Operasi — -55C to +150C
Jenis Transistor — N-Channel Enhancement Mode
Avalanche Energy Rated — Yes
dv/dt Rating — Dynamic, rated
Lead-Free — Yes (PBF suffix)
Manufacturer — Infineon (formerly International Rectifier)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga