IRF7341GTRPBF vs ISA150233C03LMDSXTMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7341GTRPBF disebabkan oleh Infineon dan ISA150233C03LMDSXTMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
ISA150233C03LMDSXTMA1 ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon

ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon

ISA150233C03LMDSXTMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IRF7341GTRPBF ISA150233C03LMDSXTMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (VDS) 55 V 30 V
Continuous Drain Current (ID) 5.1 A —
On-Resistance (RDS(on)) max 50 mOhm at VGS=10V —
Power Dissipation (PD) 2.4 W —
Maximum Junction Temperature 175 C —
Configuration Dual N-Channel Dual N-channel + P-channel (1 N + 1 P)
Technology IR HEXFET Planar MOSFET OptiMOS 3 trench MOSFET
Kemasan 8-SO (SOIC-8) PG-DSO-8-920 (SO-8 with thermal pad)
Jenis Pemasangan Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: typical VGS(th) value] —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss typical] —
Output Capacitance (Coss) [DATA_NEEDED: Coss typical] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical] —
Gambaran Suhu Operasi -55 C to +175 C -55 C to +150 C (junction)
Status RoHS Compliant Compliant
Lead-Free Yes (PBF suffix) —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 3
N-channel Continuous Drain Current (Ta) — 7.6 A
N-channel Continuous Drain Current (Tc) — 10.2 A
P-channel Continuous Drain Current (Ta) — 6.6 A
P-channel Continuous Drain Current (Tc) — 8.8 A
Total Power Dissipation (Ta) — 1.4 W
Total Power Dissipation (Tc) — 2.5 W
Marking Code — 1523C03L
Channel Type — N-channel + P-channel enhancement mode

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