IRF7341GTRPBF vs ISA150233C03LMDSXTMA1 比較
詳細並排比較 IRF7341GTRPBF 由 Infineon 與 ISA150233C03LMDSXTMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
ISA150233C03LMDSXTMA1 - 30V OptiMOS 3 Dual N+P MOSFET | Infineon
ISA150233C03LMDSXTMA1 ✓ 啟用中規格比較
| 參數 | IRF7341GTRPBF | ISA150233C03LMDSXTMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Drain-Source Voltage (VDS) | 55 V | 30 V |
| Continuous Drain Current (ID) | 5.1 A | — |
| On-Resistance (RDS(on)) max | 50 mOhm at VGS=10V | — |
| Power Dissipation (PD) | 2.4 W | — |
| Maximum Junction Temperature | 175 C | — |
| Configuration | Dual N-Channel | Dual N-channel + P-channel (1 N + 1 P) |
| Technology | IR HEXFET Planar MOSFET | OptiMOS 3 trench MOSFET |
| 封裝 | 8-SO (SOIC-8) | PG-DSO-8-920 (SO-8 with thermal pad) |
| 安裝類型 | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: typical VGS(th) value] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss typical] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | — |
| 工作溫度範圍 | -55 C to +175 C | -55 C to +150 C (junction) |
| RoHS 狀態 | Compliant | Compliant |
| Lead-Free | Yes (PBF suffix) | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 3 |
| N-channel Continuous Drain Current (Ta) | — | 7.6 A |
| N-channel Continuous Drain Current (Tc) | — | 10.2 A |
| P-channel Continuous Drain Current (Ta) | — | 6.6 A |
| P-channel Continuous Drain Current (Tc) | — | 8.8 A |
| Total Power Dissipation (Ta) | — | 1.4 W |
| Total Power Dissipation (Tc) | — | 2.5 W |
| Marking Code | — | 1523C03L |
| Channel Type | — | N-channel + P-channel enhancement mode |