IRF7469TRPBF vs IRFH5020TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7469TRPBF disebabkan oleh Infineon dan IRFH5020TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7469TRPBF IRFH5020TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET N-Channel, Metal Oxide
Technology IR MOSFET™ (HEXFET) —
Drain-Source Voltage (Vdss) 40 V —
Continuous Drain Current (Id) at TA=25°C 9 A —
Rds(on) Max at Vgs=10V 17 mΩ —
Total Gate Charge (Qg) 15 nC —
Gate-Source Voltage (Vgs) Max ±20 V —
Power Dissipation (Pd) at TA=25°C 2.5 W —
Gambaran Suhu Operasi -55°C to +150°C (Tj) -55 °C to +150 °C (TJ max)
Kemasan 8-SO (SOIC-8) —
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (unlimited) 1 (per industry standard for PQFN-8)
Status RoHS Compliant —
Lead-Free Yes —
Boson Bebas Yes —
Channel Mode Enhancement —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr] —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Product Family — HEXFET Power MOSFET
Configuration — Single with built-in diode
Drain-to-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at TA=25°C — 5.1 A
Pulsed Drain Current (IDM) — 63 A
Gate-to-Source Voltage (VGS) max — ±20 V
RDS(on) max at VGS=10V — 55 mΩ
Gate Charge (Qg) typ — 11 nC
Power Dissipation (TA=25°C) — 3.6 W
Pembuangan Kuasa (TC=25°C) — 8.3 W
Thermal Resistance, Junction-to-PCB (RthJB) — 0.8 °C/W
Package Type — 8-PQFN (5x6 mm) SuperSO8
Profile Height — ≤ 0.9 mm
Qualification Standard — JEDEC (Normal level)
Gate Drive Optimization — 10 V VGS
RoHS Compliance — Compliant (Pb-free suffix PBF)

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