IRFB3207ZPBF vs IRFB4020PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB3207ZPBF disebabkan oleh Infineon dan IRFB4020PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFB3207ZPBF IRFB4020PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRFB3207ZPBF —
Series HEXFET —
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) IR MOSFET (HEXFET)
Drain-Source Voltage (VDS) 75 V 200 V
Continuous Drain Current (ID) at TC=25C 120 A —
Silicon-Limited Drain Current 170 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissition (PD) at TC=25C 300 W —
Suhu Hubungan Operasi -55 C to +175 C 175 C (max)
Kemasan TO-220AB (3-lead through-hole) TO-220AB (through-hole)
Jenis Pemasangan Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
Aras MSL N/A (through-hole) —
Avalanche Rated Yes (improved Z-variant ruggedness) —
FET Type — N-Channel
Continuous Drain Current (ID) at TC — 18 A
Power Dissipation (PD) at TC — 100 W
RDS(on) Maximum — 100 mOhm
Gate-Source Voltage (VGS) Maximum — 20 V
Thermal Resistance, Junction-to-Case (RthJC) — 1.43 C/W
Kiraan Pin — 3 (Gate, Drain, Source)
Lead-Free (PbF suffix) — Yes
Market Qualification — Consumer
Recommended Use — Class-D audio amplifier and high-efficiency switching applications

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