IRFB3207ZPBF vs IRFB4020PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFB3207ZPBF sa pamamagitan ng Infineon at IRFB4020PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFB3207ZPBF IRFB4020PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies (formerly International Rectifier) —
Part Number IRFB3207ZPBF —
Series HEXFET —
Technology N-Channel MOSFET (HEXFET, Z-suffix ruggedized) IR MOSFET (HEXFET)
Drain-Source Voltage (VDS) 75 V 200 V
Continuous Drain Current (ID) at TC=25C 120 A —
Silicon-Limited Drain Current 170 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
On-Resistance RDS(on) typ @ VGS=10V 3.3 mOhm —
On-Resistance RDS(on) max @ VGS=10V 4.1 mOhm —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: typical VGS(th)] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissition (PD) at TC=25C 300 W —
Temperature ng Junction na Operasyon -55 C to +175 C 175 C (max)
Packhaging TO-220AB (3-lead through-hole) TO-220AB (through-hole)
Uri ng Pagpapasok Through Hole Through Hole
Lead-Free / RoHS Yes (PBF suffix = lead-free) —
Level ng MSL N/A (through-hole) —
Avalanche Rated Yes (improved Z-variant ruggedness) —
FET Type — N-Channel
Continuous Drain Current (ID) at TC — 18 A
Power Dissipation (PD) at TC — 100 W
RDS(on) Maximum — 100 mOhm
Gate-Source Voltage (VGS) Maximum — 20 V
Thermal Resistance, Junction-to-Case (RthJC) — 1.43 C/W
Bilang ng Pin — 3 (Gate, Drain, Source)
Lead-Free (PbF suffix) — Yes
Market Qualification — Consumer
Recommended Use — Class-D audio amplifier and high-efficiency switching applications

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