IRFB3306PBF vs IRF4905LPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB3306PBF disebabkan oleh Infineon dan IRF4905LPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFB3306PBF IRF4905LPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology IR HEXFET (MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) at Tc=25°C 120 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (Vgs) max ±20 V ±20 V
Rds(on) max @ Vgs=10V 4.2 mΩ —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical value] —
Total Gate Charge (Qg) typ [DATA_NEEDED: total gate charge Qg] —
Gate-Drain Charge (Qgd) typ 26 nC (nominal) —
Power Dissipation (Pd) at Tc=25°C 230 W —
Suhu Hubungan Operasi -55°C to +175°C -55C to +150C
Kemasan TO-220AB (through-hole) TO-262 (I2PAK), through-hole, 3-pin
Jenis Pemasangan Through Hole Through Hole
RoHS / Lead-Free (PbF) Yes (PbF suffix indicates lead-free, RoHS compliant) —
Avalanche Rated Yes Yes
Body Diode Intrinsic (avalanche-rated) —
Polarity — P-Channel
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) @ Tc=25C — -74 A
On-Resistance Rds(on) max @ Vgs=-10V — 20 mOhm
Gate Threshold Voltage Vgs(th) typ — [DATA_NEEDED: Vgs(th) typical]
Total Power Dissipation (Ptot) @ Tc=25C — 200 W
Thermal Resistance Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC value]
Rise Time (tr) typ — [DATA_NEEDED: rise time]
Fall Time (tf) typ — [DATA_NEEDED: fall time]
Lead-Free / RoHS — Yes (PbF suffix)

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