IRFB3306PBF vs IRF4905LPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFB3306PBF sa pamamagitan ng Infineon at IRF4905LPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFB3306PBF IRF4905LPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Technology IR HEXFET (MOSFET) HEXFET (IR MOSFET)
Drain-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) at Tc=25°C 120 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (Vgs) max ±20 V ±20 V
Rds(on) max @ Vgs=10V 4.2 mΩ —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th) typical value] —
Total Gate Charge (Qg) typ [DATA_NEEDED: total gate charge Qg] —
Gate-Drain Charge (Qgd) typ 26 nC (nominal) —
Power Dissipation (Pd) at Tc=25°C 230 W —
Temperature ng Junction na Operasyon -55°C to +175°C -55C to +150C
Packhaging TO-220AB (through-hole) TO-262 (I2PAK), through-hole, 3-pin
Uri ng Pagpapasok Through Hole Through Hole
RoHS / Lead-Free (PbF) Yes (PbF suffix indicates lead-free, RoHS compliant) —
Avalanche Rated Yes Yes
Body Diode Intrinsic (avalanche-rated) —
Polarity — P-Channel
Drain-Source Voltage (Vds) — -55 V
Continuous Drain Current (Id) @ Tc=25C — -74 A
On-Resistance Rds(on) max @ Vgs=-10V — 20 mOhm
Gate Threshold Voltage Vgs(th) typ — [DATA_NEEDED: Vgs(th) typical]
Total Power Dissipation (Ptot) @ Tc=25C — 200 W
Thermal Resistance Junction-to-Case (RthJC) — [DATA_NEEDED: RthJC value]
Rise Time (tr) typ — [DATA_NEEDED: rise time]
Fall Time (tf) typ — [DATA_NEEDED: fall time]
Lead-Free / RoHS — Yes (PbF suffix)

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