IRFB4110PBF vs IRF2805PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB4110PBF disebabkan oleh Infineon dan IRF2805PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFB4110PBF IRF2805PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Status Stok In Stock —
Harga Unit (USD) $1.55 —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25°C 120 A (bond-wire limited) —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] 4 V
On-Resistance RDS(on) max at VGS=10V 4.5 mΩ —
On-Resistance RDS(on) typ at VGS=10V 3.7 mΩ —
Power Dissipation (PD) at TC=25°C 370 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan TO-220AB (through-hole) TO-220AB (3-pin, through-hole)
Technology HEXFET (planar DMOS) HEXFET Power MOSFET (IR MOSFET)
Jenis Pemasangan Through Hole Through Hole
Status RoHS Compliant (Pb-free suffix) Compliant (Pb-free)
Lead-Free Yes (PBF suffix denotes Pb-free) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF2805PBF
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc — 75 A
Continuous Drain Current (ID) at 25°C — 175 A (pulsed / package-limited)
On-Resistance RDS(on) max @ VGS=10V — 4.7 mOhm
Total Gate Charge (Qg) — 150 nC
Power Dissipation (PD) at Tc — 330 W
Maximum Junction Temperature — 175 °C
Gambaran Suhu Operasi — -55 °C to +175 °C
Configuration — Single N-Channel MOSFET

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