IRFB4110PBF vs IRF2805PBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFB4110PBF sa pamamagitan ng Infineon at IRF2805PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFB4110PBF | IRF2805PBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | In Stock | — |
| Presyo ng Yunit (USD) | $1.55 | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25°C | 120 A (bond-wire limited) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | 4 V |
| On-Resistance RDS(on) max at VGS=10V | 4.5 mΩ | — |
| On-Resistance RDS(on) typ at VGS=10V | 3.7 mΩ | — |
| Power Dissipation (PD) at TC=25°C | 370 W | — |
| Temperature ng Junction na Operasyon | -55 °C to +175 °C | — |
| Packhaging | TO-220AB (through-hole) | TO-220AB (3-pin, through-hole) |
| Technology | HEXFET (planar DMOS) | HEXFET Power MOSFET (IR MOSFET) |
| Uri ng Pagpapasok | Through Hole | Through Hole |
| Tindminan RoHS | Compliant (Pb-free suffix) | Compliant (Pb-free) |
| Lead-Free | Yes (PBF suffix denotes Pb-free) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRF2805PBF |
| FET Type | — | N-Channel |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) at Tc | — | 75 A |
| Continuous Drain Current (ID) at 25°C | — | 175 A (pulsed / package-limited) |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.7 mOhm |
| Total Gate Charge (Qg) | — | 150 nC |
| Power Dissipation (PD) at Tc | — | 330 W |
| Maximum Junction Temperature | — | 175 °C |
| Hanay ng Temperature na Operasyon | — | -55 °C to +175 °C |
| Configuration | — | Single N-Channel MOSFET |