IRFB4310PBF vs IRF1407PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB4310PBF disebabkan oleh Infineon dan IRF1407PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFB4310PBF IRF1407PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Technology HEXFET (IR MOSFET) HEXFET (stripe-planar MOSFET)
Drain-Source Voltage (VDS) 100 V 75 V
Continuous Drain Current (ID) at Tc=25C 130 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Maximum Power Dissition (PD) at Tc=25C 300 W —
On-Resistance RDS(on) max at VGS=10V 7 mOhm —
On-Resistance RDS(on) typical at VGS=10V 5.6 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS maximum rating] —
Total Gate Charge (Qg) 170 nC —
Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical] —
Gambaran Suhu Operasi -55C to +175C (junction) -55 C to +175 C
Kemasan TO-220AB (through-hole) TO-220AB (through-hole, 3 leads)
Jenis Pemasangan Through Hole Through Hole
Avalanche Rated Yes —
Status RoHS Compliant —
Lead-Free Yes (Pb-free PBF suffix) —
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25C — 130 A
Power Dissipation (PD) at TC=25C — 330 W
On-Resistance RDS(on) at VGS=10V — 7.8 mOhm (typical)
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS threshold typical/min/max]
Gate Charge (Qg) — 160 nC (typical)
Maximum Junction Temperature — 175 C
Lead-Free / RoHS — Lead-free, RoHS compliant (PBF suffix)
Avalanche Rating — Repetitive avalanche rated

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