IRFB4310PBF vs IRF1407PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFB4310PBF sa pamamagitan ng Infineon at IRF1407PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFB4310PBF IRF1407PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel MOSFET —
Technology HEXFET (IR MOSFET) HEXFET (stripe-planar MOSFET)
Drain-Source Voltage (VDS) 100 V 75 V
Continuous Drain Current (ID) at Tc=25C 130 A —
Continuous Drain Current (ID) at Tc=100C [DATA_NEEDED: ID at Tc=100C] —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Maximum Power Dissition (PD) at Tc=25C 300 W —
On-Resistance RDS(on) max at VGS=10V 7 mOhm —
On-Resistance RDS(on) typical at VGS=10V 5.6 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS maximum rating] —
Total Gate Charge (Qg) 170 nC —
Threshold Voltage VGS(th) typ [DATA_NEEDED: VGS(th) typical] —
Hanay ng Temperature na Operasyon -55C to +175C (junction) -55 C to +175 C
Packhaging TO-220AB (through-hole) TO-220AB (through-hole, 3 leads)
Uri ng Pagpapasok Through Hole Through Hole
Avalanche Rated Yes —
Tindminan RoHS Compliant —
Lead-Free Yes (Pb-free PBF suffix) —
FET Type — N-Channel
Continuous Drain Current (ID) at TC=25C — 130 A
Power Dissipation (PD) at TC=25C — 330 W
On-Resistance RDS(on) at VGS=10V — 7.8 mOhm (typical)
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS threshold typical/min/max]
Gate Charge (Qg) — 160 nC (typical)
Maximum Junction Temperature — 175 C
Lead-Free / RoHS — Lead-free, RoHS compliant (PBF suffix)
Avalanche Rating — Repetitive avalanche rated

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