IRFB52N15DPBF vs IRFB7534PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB52N15DPBF disebabkan oleh Infineon dan IRFB7534PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFB52N15DPBF IRFB7534PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Drain-Source Voltage (V(BR)DSS) 150 V —
Continuous Drain Current (ID) at TC=25C 51 A —
Pulsed Drain Current (IDM) 204 A —
Gate Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Static Drain-Source On-Resistance (RDS(on)) 32 mOhm at VGS=10V —
Total Gate Charge (Qg) 60 nC (typical) —
Power Dissipation (PD) at TC=25C 230 W —
Power Dissipation (PD) at TA=25C 3.8 W —
Suhu Hubungan Operasi -55 C to +175 C —
Package Type TO-220AB (through-hole) —
Polarity / Channel Type N-Channel Enhancement Mode —
Technology HEXFET (vertical DMOS, hexagonal cell) StrongIRFET™ (planar N-channel)
Jenis Pemasangan Through Hole Through Hole
Status RoHS Compliant Compliant (PbF suffix)
Lead-Free Finish Yes (Pb-free PBF suffix) —
Qualification Standard Industrial market (per IR/Infineon) —
Manufacturer — Infineon Technologies
Part Number — IRFB7534PBF
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) max — 60 V
Continuous Drain Current (ID) at Tc=25C — 195 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Power Dissipation (PD) at Tc=25C — 294 W
On-Resistance RDS(on) max at VGS=10V — 2.4 mOhm
Gate Threshold Voltage VGS(th) — 3.7 V (typ)
Gate Charge Qg — [DATA_NEEDED: total gate charge]
Avalanche Energy Rated — Yes
Kemasan — TO-220AB
Gambaran Suhu Operasi — -55C to +175C
Aras MSL — MSL1 (unlimited floor life)

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