IRFB52N15DPBF vs IRFB7534PBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFB52N15DPBF sa pamamagitan ng Infineon at IRFB7534PBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFB52N15DPBF IRFB7534PBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Drain-Source Voltage (V(BR)DSS) 150 V —
Continuous Drain Current (ID) at TC=25C 51 A —
Pulsed Drain Current (IDM) 204 A —
Gate Threshold Voltage (VGS(th)) 2.0 V to 4.0 V —
Static Drain-Source On-Resistance (RDS(on)) 32 mOhm at VGS=10V —
Total Gate Charge (Qg) 60 nC (typical) —
Power Dissipation (PD) at TC=25C 230 W —
Power Dissipation (PD) at TA=25C 3.8 W —
Temperature ng Junction na Operasyon -55 C to +175 C —
Package Type TO-220AB (through-hole) —
Polarity / Channel Type N-Channel Enhancement Mode —
Technology HEXFET (vertical DMOS, hexagonal cell) StrongIRFET™ (planar N-channel)
Uri ng Pagpapasok Through Hole Through Hole
Tindminan RoHS Compliant Compliant (PbF suffix)
Lead-Free Finish Yes (Pb-free PBF suffix) —
Qualification Standard Industrial market (per IR/Infineon) —
Manufacturer — Infineon Technologies
Part Number — IRFB7534PBF
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) max — 60 V
Continuous Drain Current (ID) at Tc=25C — 195 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Power Dissipation (PD) at Tc=25C — 294 W
On-Resistance RDS(on) max at VGS=10V — 2.4 mOhm
Gate Threshold Voltage VGS(th) — 3.7 V (typ)
Gate Charge Qg — [DATA_NEEDED: total gate charge]
Avalanche Energy Rated — Yes
Packhaging — TO-220AB
Hanay ng Temperature na Operasyon — -55C to +175C
Level ng MSL — MSL1 (unlimited floor life)

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