IRFB7545PBF vs IRFB3207ZPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB7545PBF disebabkan oleh Infineon dan IRFB3207ZPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFB7545PBF IRFB3207ZPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number IRFB7545PBF IRFB3207ZPBF
Technology StrongIRFET™ (HEXFET, N-Channel) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Polarity N-Channel —
VDS (Drain-Source Voltage) max 60 V —
VGS (Gate-Source Voltage) max ±20 V —
RDS(on) max at VGS=10V 5.9 mOhm —
Continuous Drain Current (ID) at Tc=25C 95 A —
Pulsed Drain Current (IDM) 380 A [DATA_NEEDED: pulsed drain current value]
Single-Pulse Avalanche Current (IAS) 57 A —
Power Dissipation (PD) at Tc=25C 125 W —
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W —
Suhu Hubungan Operasi -55C to +175C -55 C to +175 C
Kemasan TO-220AB (Through-Hole) TO-220AB (3-lead through-hole)
Jenis Pemasangan Through Hole (THT) Through Hole
Lead-Free / RoHS Yes (Lead-Free, PBF suffix) Yes (PBF suffix = lead-free)
Aras MSL N/A (Through-Hole) N/A (through-hole)
Gate Drive Voltage (typical) 10 V —
Avalanche Energy Rated Yes —
Series — HEXFET
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
Avalanche Rated — Yes (improved Z-variant ruggedness)

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