IRFB7545PBF vs IRFB3207ZPBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRFB7545PBF tarafından Infineon ve IRFB3207ZPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRFB7545PBF IRFB3207ZPBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number IRFB7545PBF IRFB3207ZPBF
Technology StrongIRFET™ (HEXFET, N-Channel) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Polarity N-Channel —
VDS (Drain-Source Voltage) max 60 V —
VGS (Gate-Source Voltage) max ±20 V —
RDS(on) max at VGS=10V 5.9 mOhm —
Continuous Drain Current (ID) at Tc=25C 95 A —
Pulsed Drain Current (IDM) 380 A [DATA_NEEDED: pulsed drain current value]
Single-Pulse Avalanche Current (IAS) 57 A —
Power Dissipation (PD) at Tc=25C 125 W —
Thermal Resistance Junction-to-Case (RthJC) 1.0 C/W —
İşletim Jant Sıcaklığı -55C to +175C -55 C to +175 C
Paket TO-220AB (Through-Hole) TO-220AB (3-lead through-hole)
Montaj Türü Through Hole (THT) Through Hole
Lead-Free / RoHS Yes (Lead-Free, PBF suffix) Yes (PBF suffix = lead-free)
MSL Seviyesi N/A (Through-Hole) N/A (through-hole)
Gate Drive Voltage (typical) 10 V —
Avalanche Energy Rated Yes —
Series — HEXFET
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
Avalanche Rated — Yes (improved Z-variant ruggedness)

Dökümanlar & Kaynaklar

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