IRFH5015TRPBF vs IQE022N06LM5CGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFH5015TRPBF disebabkan oleh Infineon dan IQE022N06LM5CGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFH5015TRPBF IQE022N06LM5CGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology IR MOSFET (HEXFET) N-Channel Power MOSFET (Enhancement Mode)
Drain-Source Voltage (VDS) 150 V —
Continuous Drain Current (ID) at TA=25C 10 A —
Continuous Drain Current (ID) at TC=25C 56 A —
On-Resistance (RDS(on)) max 31 mOhm —
Total Gate Charge (Qg) 33 nC —
Power Dissipation (TA=25C) 3.6 W —
Power Dissipation (TC=25C) 156 W —
Gate Drive Voltage (VGS recommended) 10 V —
Kemasan 8-PQFN (5x6) SuperSO8 PG-TTFN-9-3 (PQFN 3.3x3.3 mm)
Jenis Pemasangan Surface Mount Surface Mount
Configuration Single with built-in body diode —
Suhu Operasi -55C to +150C (TJ max) —
Status RoHS Compliant Compliant
Manufacturer — Infineon Technologies
Part Family — OptiMOS 5
Drain-Source Voltage (V_DS) — 60 V
Continuous Drain Current (I_D) at T_A=25C — 24 A
Continuous Drain Current (I_D) at T_C=25C — 151 A
R_DS(on) (typical, V_GS=10V) — 2.2 mΩ
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max rating]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) value]
Total Gate Charge (Q_G) — [DATA_NEEDED: Q_G value]
Power Dissipation (T_A) — 2.5 W
Power Dissipation (T_C) — 100 W
Gambaran Suhu Operasi — -55C to +150C
Kiraan Pin — 9 (with exposed thermal pad)
Lead-Free — Yes

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