IRFH5015TRPBF vs IQE022N06LM5CGATMA1 比較
詳細並排比較 IRFH5015TRPBF 由 Infineon 與 IQE022N06LM5CGATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Infineon
IQE022N06LM5CGATMA1 - 60V OptiMOS 5 N-Ch MOSFET, 2.2mΩ | Infineon
IQE022N06LM5CGATMA1 ✓ 啟用中規格比較
| 參數 | IRFH5015TRPBF | IQE022N06LM5CGATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | IR MOSFET (HEXFET) | N-Channel Power MOSFET (Enhancement Mode) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TA=25C | 10 A | — |
| Continuous Drain Current (ID) at TC=25C | 56 A | — |
| On-Resistance (RDS(on)) max | 31 mOhm | — |
| Total Gate Charge (Qg) | 33 nC | — |
| Power Dissipation (TA=25C) | 3.6 W | — |
| Power Dissipation (TC=25C) | 156 W | — |
| Gate Drive Voltage (VGS recommended) | 10 V | — |
| 封裝 | 8-PQFN (5x6) SuperSO8 | PG-TTFN-9-3 (PQFN 3.3x3.3 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Configuration | Single with built-in body diode | — |
| 工作溫度 | -55C to +150C (TJ max) | — |
| RoHS 狀態 | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Family | — | OptiMOS 5 |
| Drain-Source Voltage (V_DS) | — | 60 V |
| Continuous Drain Current (I_D) at T_A=25C | — | 24 A |
| Continuous Drain Current (I_D) at T_C=25C | — | 151 A |
| R_DS(on) (typical, V_GS=10V) | — | 2.2 mΩ |
| Gate-Source Voltage (V_GS) max | — | [DATA_NEEDED: V_GS max rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) value] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G value] |
| Power Dissipation (T_A) | — | 2.5 W |
| Power Dissipation (T_C) | — | 100 W |
| 工作溫度範圍 | — | -55C to +150C |
| 腳位數 | — | 9 (with exposed thermal pad) |
| Lead-Free | — | Yes |