IRFH8201TRPBF vs IRFH5020TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFH8201TRPBF disebabkan oleh Infineon dan IRFH5020TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFH8201TRPBF IRFH5020TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET N-Channel, Metal Oxide
Technology StrongIRFET (trench MOSFET) —
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (ID) at TA=25C 49 A —
Continuous Drain Current (ID) at TC=25C 100 A —
Pulsed Drain Current (IDM) 324 A 63 A
RDS(on) max at VGS=10V 0.95 mOhm 55 mΩ
Gate Threshold Voltage (VGS(th)) 1.35 V max —
Total Gate Charge (Qg) 56 nC at VGS=10V —
Output Capacitance (Coss) 7.33 nF —
Reverse Transfer Capacitance (Crss) 850 pF —
Power Dissipation (TA) 3.6 W —
Power Dissipation (TC) 156 W —
Gambaran Suhu Operasi -55C to +150C -55 °C to +150 °C (TJ max)
Kemasan SuperSO8 5x6 (PQFN-8) with exposed pad —
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL [DATA_NEEDED: MSL level] 1 (per industry standard for PQFN-8)
Status RoHS Compliant —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Product Family — HEXFET Power MOSFET
Configuration — Single with built-in diode
Drain-to-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at TA=25°C — 5.1 A
Gate-to-Source Voltage (VGS) max — ±20 V
Gate Charge (Qg) typ — 11 nC
Power Dissipation (TA=25°C) — 3.6 W
Pembuangan Kuasa (TC=25°C) — 8.3 W
Thermal Resistance, Junction-to-PCB (RthJB) — 0.8 °C/W
Package Type — 8-PQFN (5x6 mm) SuperSO8
Profile Height — ≤ 0.9 mm
Qualification Standard — JEDEC (Normal level)
Gate Drive Optimization — 10 V VGS
RoHS Compliance — Compliant (Pb-free suffix PBF)

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