IRFR2405TRLPBF vs IRFR220NPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR2405TRLPBF disebabkan oleh Infineon dan IRFR220NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR2405TRLPBF | IRFR220NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET, 7th generation) | HEXFET (Planar) |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc | 56 A | — |
| Pulsed Drain Current (IDM) | 200 A (typical, per datasheet family) | — |
| On-Resistance RDS(on) max @ VGS=10V | 16 mOhm | — |
| Gate Charge (Qg) typical | 70 nC | — |
| Power Dissipation (PD) at Tc | 110 W | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gambaran Suhu Operasi | -55 C to +175 C (junction) | -55C to +150C (junction) |
| Kemasan | TO-252AA (DPAK), 3-pin (2 + Tab) | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Avalanche Energy Rated | Yes (HEXFET ruggedized design) | Yes (per datasheet characterization) |
| Lead-Free / RoHS | Yes, PBF suffix indicates lead-free and RoHS compliant | Yes, lead-free (PBF suffix) |
| Packaging | Tape & Reel (TR) | — |
| FET Type | — | N-Channel MOSFET, Metal Oxide |
| Drain-to-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at TC=25C | — | 5 A |
| Power Dissipation (PD) at TC=25C | — | 43 W |
| Static Drain-Source On-Resistance (RDS(on)) max | — | 0.6 ohm at VGS = 10 V |
| Kemasan / Case | — | TO-252AA (DPAK) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Kiraan Pin | — | 3 (Gate, Drain, Source) plus tab |
| Aras MSL | — | 1 (per JEDEC J-STD-020) |