IRFR2405TRLPBF vs IRFR220NPBF 比較

詳細並排比較 IRFR2405TRLPBF 由 Infineon 與 IRFR220NPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IRFR2405TRLPBF IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF - 55V 56A N-Ch HEXFET MOSFET DPAK | Infineon

IRFR2405TRLPBF ✓ 啟用中

規格比較

參數 IRFR2405TRLPBF IRFR220NPBF
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel MOSFET —
Technology HEXFET (IR MOSFET, 7th generation) HEXFET (Planar)
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at Tc 56 A —
Pulsed Drain Current (IDM) 200 A (typical, per datasheet family) —
On-Resistance RDS(on) max @ VGS=10V 16 mOhm —
Gate Charge (Qg) typical 70 nC —
Power Dissipation (PD) at Tc 110 W —
Gate-Source Voltage (VGS) max ±20 V —
工作溫度範圍 -55 C to +175 C (junction) -55C to +150C (junction)
封裝 TO-252AA (DPAK), 3-pin (2 + Tab) —
安裝類型 Surface Mount Surface Mount
Avalanche Energy Rated Yes (HEXFET ruggedized design) Yes (per datasheet characterization)
Lead-Free / RoHS Yes, PBF suffix indicates lead-free and RoHS compliant Yes, lead-free (PBF suffix)
Packaging Tape & Reel (TR) —
FET Type — N-Channel MOSFET, Metal Oxide
Drain-to-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at TC=25C — 5 A
Power Dissipation (PD) at TC=25C — 43 W
Static Drain-Source On-Resistance (RDS(on)) max — 0.6 ohm at VGS = 10 V
封裝 / 外殼 — TO-252AA (DPAK)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Qg) — [DATA_NEEDED: total gate charge]
腳位數 — 3 (Gate, Drain, Source) plus tab
MSL 等級 — 1 (per JEDEC J-STD-020)

資料表與資源

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