IRFR3411TRPBF vs IRFR220NTRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR3411TRPBF disebabkan oleh Infineon dan IRFR220NTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR3411TRPBF IRFR220NTRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
FET Type MOSFET (Metal Oxide) N-Channel MOSFET
V(BR)DSS (Drain-Source Breakdown Voltage) 100 V —
RDS(on) max @ VGS=10V 44 mOhm —
Continuous Drain Current (Id) @ Tc 32 A —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (Pd) @ Tc 130 W —
Gate Charge (Qg) 48 nC —
Operating Mode Enhancement —
Maximum Junction Temperature 175 C —
Gambaran Suhu Operasi -55 C to +175 C —
Kemasan TO-252AA (DPAK) TO-252AA (DPAK), surface mount
Jenis Pemasangan Surface Mount Surface Mount
Bilangan Pin 3 —
Technology HEXFET Power MOSFET (IR) HEXFET (IR MOSFET)
Avalanche Rated Yes (fully avalanche rated) —
dv/dt Rating Dynamic dv/dt rated —
Lead-Free / RoHS Yes (Lead-free, PBF suffix) —
Drain-to-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at TC=25°C — 5 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-to-Source Voltage (VGS) max — [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
On-Resistance Rds(on) max at VGS=10V — 600 milliohm
Total Gate Charge (Qg) — 15 nC (typical per Mouser listing)
Maximum Power Dissition (PD) at TC=25°C — 43 W
Suhu Hubungan Operasi — -55°C to +150°C
Aras MSL — 1 (unlimited floor life per JEDEC J-STD-020)
Status RoHS — Compliant (PBF suffix)
Avalanche Energy Rated — Yes (fully characterized)
Lead-Free — Yes (PBF suffix indicates Pb-free plating)

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