IRFR3607TRPBF vs IRLR2905TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR3607TRPBF disebabkan oleh Infineon dan IRLR2905TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR3607TRPBF | IRLR2905TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity / Channel Type | N-Channel | — |
| Drain-to-Source Voltage (VDS) | 75 V | 55 V |
| Continuous Drain Current (ID, Tc) | 56 A | — |
| Calculated Die Drain Current | 80 A | — |
| On-State Resistance (RDS(on)) | 9 mOhm @ VGS=10V, ID=46A | — |
| Gate Threshold Voltage (VGS(th)) | 4 V | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | 56 nC | — |
| Gate-to-Source Voltage (VGS) Max | +/-20 V | — |
| Power Dissipation (PD, Tc) | 140 W | — |
| Thermal Resistance (RthJC) | 1.0 C/W | — |
| Gambaran Suhu Operasi | -55C to +175C (TJ max 175C per datasheet convention) | — |
| Kemasan | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | IR HEXFET (planar DMOS) | HEXFET (IR MOSFET, fifth generation) |
| Avalanche SOA | Fully characterized | — |
| RoHS / Lead-Free | Compliant / Pb-free (PBF suffix, JESD-609 e3) | — |
| FET Type | — | N-Channel MOSFET |
| Continuous Drain Current (ID) at Tc=25C | — | 42 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max @ VGS=10V | — | 27 mOhm |
| Gate Charge (Qg) | — | 32 nC |
| Power Dissipation (PD) at Tc=25C | — | 110 W |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Avalanche Rated | — | Yes |
| Lead-Free / RoHS | — | Yes / Compliant |
| Aras MSL | — | [DATA_NEEDED: MSL rating] |
| Gate Drive | — | Logic-level compatible |